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Power Electronics Europe News
 
Next-generation package for power MOSFETs achieves significant on-resistance and thermal resistance reductions
Toshiba Electronics Europe (Toshiba) has announced the launch of two new N-channel power MOSFETs, the 80V TPM1R908QM and the 150V TPM7R10CQ5.

The company says these latest offerings adopt its innovative SOP Advance(E) package, designed to significantly enhance performance in switched-mode power supplies for demanding industrial equipment, including data centres and communication base stations.

Toshiba says the new SOP Advance(E) package marks a substantial improvement over its existing SOP Advance(N) package, reducing package resistance by approximately 65% and thermal resistance by approximately 15% and these package enhancements directly translate into superior device performance.

The 80V TPM1R908QM exhibits a reduction in drain-source on-resistance (RDS(ON)) of approximately 21% and channel-case thermal resistance (Rth(ch-c)) of approximately 15% when compared to Toshiba’s existing product, the TPH2R408QM, of same voltage rating. Similarly, the 150V TPM7R10CQ5 achieves approximately 21% lower RDS(ON) and approximately 15% lower Rth(ch-c) than Toshiba’s existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high speed body diode for increased efficiency in synchronous rectification.

The reductions in on-resistance and suppressed temperature rise due to improved thermal resistance contribute to a lower overall on-resistance, even considering positive temperature characteristics. This combination ultimately achieves lower loss and higher efficiency in critical applications such as switched-mode power supplies for industrial equipment, including those powering data centres and communication base stations.

The TPM1R908QM features a drain-source voltage (VDSS) of 80V, a drain current (ID) of 238A (Tc=25°C), and a maximum RDS(ON) of 1.9mΩ (VGS=10V). The TPM7R10CQ5 offers a VDSS of 150V, an ID of 120A (Tc=25°C), and a maximum RDS(ON) of 7.1mΩ (VGS=10V). Both products have a channel temperature (Tch) of 175°C and a maximum Rth(ch-c) of 0.6°C/W (Tc=25°C). The SOP Advance(E) package typically measures 4.9mm × 6.1mm.

To further support circuit design for switched-mode power supplies, Toshiba says it also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.

 Toshiba says it is committed to expanding its portfolio of power MOSFETs to facilitate more efficient power supplies, thereby aiding in the reduction of overall equipment power consumption.



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