The company says the new series utilises the company's proprietary GaAs wafer process technology and is designed to support highly efficient rectification in WPT systems by combining low forward voltage with high DC withstand voltage, enabling improved conversion efficiency over a wide dynamic range.

Microwave WPT technology is increasingly recognised as a key enabler for next-generation power supply infrastructure. With the rapid expansion of digital transformation and the growing number of IoT devices, the demand for continuous and maintenance-free power sources for distributed electronics continues to increase. In industrial environments, logistics systems, social infrastructure, agriculture, and healthcare facilities, supplying power to devices in locations where wiring is impractical, or battery replacement is difficult presents a significant challenge. As regulatory frameworks for microwave frequency use continue to evolve worldwide, efforts are accelerating to move wireless power transfer from experimental deployments toward real-world implementation.

One of the central technical challenges in practical microwave WPT systems is the efficiency with which received microwave energy can be converted into usable DC power. This requirement is particularly critical for IoT applications operating in low-power environments. The series addresses this challenge by offering a typical forward voltage of 0.1 V, allowing rectifier circuits to achieve efficient DC conversion even with limited input power. At the same time, the devices provide high DC withstand voltage to maintain stable operation when input power increases, helping suppress device breakdown and limiting leakage current during rectification.

The NT9000 and NT9001 models are optimised for rectifier circuits in the 1 W power class, while the NT9002 and NT9003 are designed for 1 mW-class rectifier circuits. This differentiation allows designers to select the most suitable device depending on the intended operating power range and application requirements. All devices in the series operate across widely used frequency bands for wireless power transmission, including 920 MHz, 2.4 GHz, and 5.7 GHz. The diodes also feature low reverse leakage current and low capacitance characteristics that contribute to stable high-frequency rectification performance. These electrical properties help designers achieve efficient RF-to-DC conversion in rectifier circuits and detectors used in WPT receivers.

Beyond WPT receiver circuits, these discrete diodes can also be utilised in other RF circuit applications that require efficient rectification or detection at microwave frequencies. Nisshinbo Micro Devices continues to support system designers by providing design resources such as SPICE models and application notes to facilitate the development of rectifier circuits using these components.

The series is housed in a compact DFN1212-4-HD package measuring only 1.2 × 1.2 mm, integrating two diodes within a single package. This small footprint reduces the required PCB mounting area and supports high-density circuit implementations. The package design also simplifies rectifier circuit configurations, particularly in multi-stage rectifiers or bridge topologies where multiple diode devices are required.