Toshiba says by adopting the U-MOS11-H process, the TPHR6704RL achieves a typical drain-source on-resistance (R_DS(ON)) of 0.52mΩ at a gate-source voltage (V_GS) of 10V, and a maximum R_DS(ON) of 0.67mΩ at a V_GS of 10V. Compared to the existing 40V product (TPHR8504PL) manufactured using the U-MOS IX-H process, the R_DS(ON) is approximately 21% lower. In addition, the switching performance of the new device improves, with a typical total gate charge (Q_g) of 88nC and a gate switch charge (Q_SW) of 24nC, resulting in a reduction in the R_DS(ON) × Q_g figure-of-merit by approximately 37%, enabling low-loss operation.

TPHR6704RL will reportedly be able to help designers to reduce EMI in switched-mode power supplies by minimising voltage spikes generated between the drain and source during switching.

The TPHR6704RL also offers robust current and thermal performance, with a drain current (I_D) rating of up to 420A and a channel-to-case thermal resistance of 0.71°C/W at 25°C, enabling stable operation under high-load conditions. The device operates over a wide temperature range, with a maximum channel temperature (T_ch) of 175°C, supporting reliable operation in demanding industrial environments.

Housed in the SOP Advance (N) package, the device offers high footprint compatibility with existing SOP Advance designs, simplifying replacement and board-level upgrades.

To support efficient power supply design, Toshiba says it offers a comprehensive set of circuit design tools. In addition to the G0 SPICE model for rapid functional verification, high-accuracy G2 SPICE models are available to accurately reproduce transient and switching characteristics, helping designers optimise efficiency, EMI, and thermal performance.

Toshiba says it will continue to expand its lineup of power MOSFETs that enable higher-efficiency power supplies that reduce power consumption and improve performance across a wide range of industrial equipment.

For more information, visit: TPHR6704RL