The 600 V SiHx28N60EF and SiHx33N60EF have low reverse recovery charge and on-resistance. They are designed to save energy in industrial, telecomms, computing, and renewable energy applications. 

Built on second-generation Super Junction technology, the 600V fast body diode offer a 10x lower reverse recovery charge (Q_rr) than standard MOSFETs. They can regain the ability to block the full breakdown voltage quickly, avoiding failure from shoot-through and thermal overstress. Reduced Q_rr results in lower reverse recovery losses compared with standard MOSFETs. 

The 28A SiHx28N60EF and 33A SiHx33N60EF feature low on-resistance of 123 and 98Ω, respectively, and low gate charge. These values, says the company, translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecomms power systems, ATX/silver box PC SMPS, welding equipment, UPS, battery chargers, semiconductor capital equipment, and LED and HID lighting. 

They are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. They are RoHS-compliant and halogen-free.

Samples are available now. Production quantities will be available in Q1 2015.