The three MOSFETs are in the tiny DFN0606 package and are 20V and 30V rated N-channel transistors and a 30V rated P-channel part. The footprint is just 0.6 x 0.6mm, allowing each device to take 40% less board space than the commonly used DFN1006 (aka SOT883) packaged MOSFETs, says the company. This reduction makes them suitable for next-generation wearable tech, tablets and smartphones. The DMN2990UFZ (20V nMOS), the DMN31D5UFZ (30V nMOS) and DMP32D9UFZ (30V pMOS) have been designed to minimise on-state resistance without effecting switching performance. A typical threshold voltage of less than 1V means a lower ‘turn-on’, suitable for single-cell operation. These MOSFETs are suited for high-efficiency power-management duties and as general-purpose interfacing and simple analogue switches. Circuit power density is also boosted with DFN0606 parts achieving a power dissipation of 300mW.

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