Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyzes principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are diccussed.

The book addresses also power device function, thermal behavior of devices and packages, reliability. The treatment of semiconductor physics differs from other textbooks. “What might be called the German method of taking into account emitter recombination and behavior of the middle region is employed in the analysis of diode forward I-V characteristics" (review Phil Hower, TI) however, is essential for the function of modern power devices (emitter engineering).

www.springer.com/gp/book/9783642111242