Covering the 13.5 to 14.75GHz commercial satcom band, the 30W GaN MMIC, two-stage, high power amplifier will allow the satcom industry to achieve higher power, more efficient Ku-Band designs, than the incumbent TWT or GaAs ones used today, claims the company.

The 50Ω MMIC is available in a compact, 25 x 9.6mm, 10-lead, metal/ceramic flanged package (CMPA1D1E025F), or as a bare die (CMPA1D1E030D). It operates at 40V V_DD, and delivers satcom measured performance of 20dB linear gain at 42dBm average output power, while maintaining linearity under the -33dBc OQPSK signal, and with adjacent channel power at a drain efficiency of 20%. The amplifier is claimed to deliver higher breakdown voltage, power density, a

nd thermal conductivity than comparable Si, GaAs, or GaN-on-Si transistors, in addition to wider bandwidth performance.