The EPC2037 enhancement-mode gallium nitride power transistors (eGaN FETs) are packaged in a 0.9 x 0.9 mm package. The 100V_DS, 1A device has a maximum R_DS(on) of 550mΩ with 5V applied to the gate. The GaN transistor has high switching frequency, low R_DS(on), and what the company says is exceptionally low Q_G.  It is designed to be driven directly from a digital logic IC, eliminating the need for a separate and costly driver IC.

According to the company, the FET is smaller and with superior switching performance compared with a power MOSFET with similar on-resistance.

As well as wireless charging, the FET can be used in high frequency DC/DC conversion, LiDAR/pulsed power, and class-D audio amplifiers.

A development board, the EPC9051 is available to support in-circuit performance evaluation.