Available with 800 and 900V ratings, the n-channel devices have typical on resistance (R_DS(ON)) ratings down to just 1.9Ω. Target applications are flyback converters in LED lighting, supplementary power supplies and other circuits requiring current switching below 5A.

They are based on Toshiba’s π-MOS VIII (Pi-MOS-8) eighth generation planar semiconductor process, which combines high cell integration with optimised cell design, says the company. This technology supports reduced gate charge and capacitance without losing the benefits of low R_DS(ON).  

The 2.5A TK3A90E and 4.5A TK5A90E feature V_DSS ratings of 900V and have respective typical R_DS(ON) ratings of 3.7 and 2.5Ω. Both the 4.0A TK4A80E and 5.0A TK5A80E devices offer V_DSS ratings of 800V with respective typical R_DS(ON) ratings of 2.8 and 1.9Ω.

Low maximum leakage current is only 10μA (V_DS = 60V) and gate threshold voltage range is 2.5 to 4.0V (when V_DS is 10V and drain current is 0.4mA). All four are supplied in a standard TO-220SIS form factor.

Visit Toshiba Electronics Europe at PCIM 2016: , Hall 9 Booth 301