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Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
GaN power ICs combine FETs and logic to surpass silicon
![](http://79.170.40.53/power-mag.com/userfiles/image/PEE_April-2016/Navitas for ESP PR1 image (logo and schematic only).png)
The high frequency, energy-efficient converters will enable a new generation of smartphone and laptop chargers, OLED TVs, LED lighting, solar inverters, wireless charging devices and data centres.
GaN could displace silicon in the power electronics market, by virtue of its inherent high-speed, high-efficiency capabilities as a power FET, maintains the company. Previously, that potential was limited by the lack of equally high performance circuits to drive the GaN FETs quickly and cost effectively. The company believes it has solved this challenge by monolithically integrating GaN drive and logic circuits with GaN power FETs. It believes that high-frequency GaN power ICs will enable low-frequency, silicon-based power systems.
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