Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Higher power charger circuits to charge devices in less time is driving demands for MOSFETs for synchronous rectification. The latest additions to the family directly increase the output current of the charger circuit, using a simple circuit design keeping high current conversion inside the charger. A 60V platform is selected for better on-resistance and voltage tolerance balance. All are optimized for low on-resistance at a lower gate drive voltage, which is normally around 4.5V. Switching losses depend on the control scheme used in the charger circuit. The company’s AlphaSGT process is claimed to provide best-in-class on-resistance with very low parasitic capacitance, for lower switching loss. The devices are also tuned to keep EMI suppression simple and reliable.
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