![Power_electronics Features](images/features/small/456.jpg)
Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
More details...
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
The AOZ5166QI-01 is designed for high power density voltage regulators for servers, workstations, graphic cards and desktop PC applications.
The 40pin, 6.0 x 6.0mm QFN package integrates an optimised dual gate driver and two MOSFETs, to produce a high efficiency DC/DC synchronous buck power stage, claims the company.
The company’s proprietary trench MOSFET and packaging technologies contribute to efficiency and thermal performance, reduce switching loss and lower power dissipation for a higher current driving capability. The low RDS (ON) of low-side MOSFET combined with the low Qg high-side MOSFET balances switching and conduction losses to increase overall efficiency by 1%.
The module is available immediately in production quantities. Options are minimum VIN of 4.5V and maximum VIN of 16V (AOZ503QI-01) or 25V for the other four modules in the series. PWM logic is 3.3V (AOZ5036QI-01, AOZ5066QI-01 and AOZ5049QI) or 5.0V (AOZ5066QI and AOZ5049QI).
View PDF
| Privacy Policy | Site Map | © Copyright DFA Media
| Web design by Immersive Media