The SLG59M1730C, SLG59M1736C and SLG59M1735C are offered in wafer level chip scale packaging (WLCSP) and combine the company’s FET IP and system-level protection.

They address PCB-space-constrained, high-performance applications in tablet PC, smartphones and fitness band markets, says the company, covering high-side power control applications from 1.0 to 4.0A.

For smartphone and fitness band applications, the 0.64mm² (0.8 x 0.8mm) SLG59M1730C (33mΩ/1.0A) and the SLG59M1736C (33mΩ/2.2A) are low-leakage, self-powered pFET IPSs that can operate from 2.5 to 5.5V supply voltages. Both offer low-threshold on/off control, fast output voltage discharge, and a novel, controlled input current profile on start-up. The controlled 16.5 mA inrush current profile on start-up, in the SLG59M1730C/SLG59M1736C prevents Li-Ion battery voltage sag when Bluetooth radios or other high current-demand operations are enabled. When compared to other four-ball WLCSPs available, with fast, fixed output voltage rise times, the magnitude of the in-rush current, which is directly proportional to the load capacitor value - can be large. If the resultant in-rush current is large enough to cause the Li-Ion battery voltage to sag, an inadvertent system reset can result. The controlled in-rush current attribute prevents unintended system resets from occurring, says the company.

For tablet PC applications, the SLG59M1735C is a 10.5mΩ/4.0A nFET IPS, powered from 2.5 to 5.5V supplies. The input voltage range extends down to 0.9V to accommodate 1.0V high-current rails found in FPGA, ASIC, and processor power sequencing applications. The SLG59M1735C features on/off control, soft-start control, under-voltage detection, and two-level current-limit protection. When compared to other packaged products in the company’s GFET3 portfolio with similar features, the 1.5mm² SLG59M1735C is a 50% smaller footprint. When compared to other 4.0A WLCSP/DFN products in the market with similar protection features, the SLG59M1735C is a 14 to 32% smaller footprint.