The company also claims that the super-junction MOSFETs deliver best-in-class on-resistance (R_DS(ON)) and dynamic characteristics.

A 900V breakdown voltage assures extra safety margin in systems with high bus voltages, says the company. The 900V MOSFETs have R_DS(ON) below 100mΩ, claimed to be the industry’s best R_DS(ON) among DPAK devices. It also claims the ndustry’s lowest gate charge (Qg) to ensure faster switching for greater flexibility where a wide input-voltage range is required. These characteristics are designed for high efficiency and reliability in all types of flyback converters including standard, quasi-resonant, and active-clamp designs covering power ratings from 35 to 230W or higher. Low input and output capacitances (Ciss, Coss) enable zero-voltage switching with minimal energy loss in half-bridge LLC resonant converters.

The MOSFETs can be used to improve the performance of a server power supplies, three-phase switched-mode power supplies (SMPS), LED lighting supplies, electric-vehicle (EV) chargers, solar generators, welders, industrial drives, and factory automation.

The MDmesh K5 super-junction transistors have voltage ratings of 800, 850, 900, 950, 1050, 1200, and 1500. Package choices are TO-220AB, TO-220FP, TO-247, TO-247 Long Lead, IPAK and I2PAK, D2PAK and DPAK surface-mount power package options.