Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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The Trench MOS Barrier Schottky rectifiers are claimed to save “significant” space in designs, increase power density and improve efficiency.
They provide space-saving alternatives to Schottky rectifiers in the SOD123W package. The rectifiers have reverse voltages from 45 to 150V and include what is claimed to be the industry's first 2.0A TMBS rectifiers in the MicroSMP to deliver forward voltage as low as 0.4V.
Currently, Schottky rectifiers with current ratings to 2.0A are typically available in the SOD123W and SMA packages. These TMBS rectifiers increase power density by offering this high forward current in the smaller MicroSMP. Measuring 2.5 x 1.3mm, and a low 0.65mm profile, the package is 35% thinner than the SOD123W package, while occupying 45% less board space. The MicroSMP package features an asymmetric leadframe design for thermal performance.
With their forward voltage drop down to 0.36V for 1.0A devices and 0.4V for 2.0A devices, the rectifiers reduce power loss and improve efficiency in low voltage, high frequency inverters, DC/DC converters, and freewheeling and polarity protection diodes for commercial and industrial applications. The rectifiers are available in an AEC-Q101 qualified version for automotive applications.
Maximum operating junction temperature is up to 175°C and an MSL (moisture sensitivity level) of one, per J-STD-020, LF maximum peak of 260°C. They are suitable for automated placement and are RoHS-compliant and halogen-free.
Samples and production quantities are available now, with lead times of 12 weeks for larger orders.
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