The 100V 3.6mΩ AONS66916 has best-in-class R_DS(ON)  and 67 Qg, claims Alpha and Omega Semiconductor. Its robust capability increases the safety margin, adds the company.  In synchronous rectification, it is essential to optimise the reverse recovery charge and reduce the voltage over-shoot to enable higher efficiency and robustness to critical high density telecomms and server applications.

The AlphaSGT2 provides approximately 30% lower R_DS(ON) compared to AlphaSGT1 and is designed to be more robust with significant avalanche energy improvement. AlphaSGT2 technology reduces both conduction and switching losses, enabling circuit designers to prevent paralleling devices for lower turn-on resistance, enabling higher power density in power supply applications.

The MOSFET is immediately available in production quantities with a lead-time of 15 weeks.