Available in a DFN 3.3 x 3.3mm package, the 25V n-channel MOSFET is claimed to set a new industry standard for high power density applications. The MOSFET is suitable for synchronous buck converters and extends the XSPairFET portfolio.
It is designed with the latest bottom source packaging technology and has lower switch node ringing due to lower parasitic inductance. It also offers a higher power density compared to existing solutions and is particularly well suited to use in computing, server and telecommunications markets, adds the company. The device has an integrated high-side and low-side MOSFETs (7 and 2mΩ maximum on-resistance, respectively) within a DFN 3.3 x 3.3mm XSPairFET package.
The low-side MOSFET source is connected directly to the exposed pad on the PCB to enhance thermal dissipation. Using an existing notebook design under typical conditions, 19V input, with 1.05V output, and a 21A output load condition, provides the AONE36132 with more than a 2% efficiency improvement when compared to a single DFN 5.0 x 6.0mm high side and single DFN 5.0 x 6.0mm low side configuration.
The MOSFET is immediately available in production qualities, with various RDS(ON) levels and multiple package options.

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