At PCIM Europe 2018 in Nuremberg US-based Transphorm (hall 9-626) announced its third generation (Gen III) 650-V cascoded GaN FETs. Power transistors built on Gen III technology yield lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications. Gen III devices being released include the TP65H050WS 50 mΩ FET and TP65H035WS 35 mΩ FET, both available in standard TO-247 packages. “It’s important to us to evolve our GaN technology based on customer need and real-world experience. Our Gen III FETs exemplify what’s possible when we adhere to that basic philosophy,” said Philip Zuk, Vice President of Technical Marketing. Currently shipping are the

• TP65H050WS 50 mΩ TO-247 unit price $8.86 (1000 unit quantities)

• TP65H035WS 35 mΩ TO-247 unit price $11.55.

Optimal output ratings: 1.5 kW to 5.0 kW applications depending on design criteria.

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