Toshiba Electronics Europe has integrated MOSFET devices fabricated using its U-Mos IX process to reduce on-state resistance. The photorelay is housed in a small, four-pin SO6 package and provides an off-state output terminal voltage (V_OFF) of 60V, a constant on-state current (I_ON) of 1.4A and an on-state pulsed current (I_ONP) up to 4.2A. The on-state resistance (R_ON) is typically just 0.13Ω, allowing highly efficient operation while the off-state current is only 1μA, adds the company.

The device offers fast switching times of 3ms (t_ON) and 1ms (t_OFF) with an isolation voltage of 3750Vrms. It is approved to UL1577 for safety-critical applications.

The normally-open model serves as a replacement for 1-Form-A mechanical relays to improve system reliability and save space. Operating temperature is between -40 and 110°C, which makes it easier to allow for a temperature margin in system-level thermal design, says the company.

The photorelay also helps increase the system drive current, making it possible to serve as a replacement for a range of mechanical relays.

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