The 3.5 to 11A transistors have been developed for sub-1kW power applications in consumer products, such as AC adapters for gaming and workstation laptops, TV power, LED lighting, wireless power systems, and appliance motor drives.

They use the 650V enhancement mode GaN HEMTs. The devices are packaged in thermally efficient, low cost PDFN packages with small footprint (5.0 x 6.0mm). Depending on the device, ratings are 3.5, 8.0 and 11A, ranging in RDS(on) from 500 to 150mΩ. According to the company, design benefits include low inductance and three parts in the same small footprint.

The company offers a range of discrete devices to maximise design freedom, accommodate varied power levels and allow power system engineers to maintain design control and change parameters to meet specific requirements, such as EMI emissions.

An evaluation kit for these transistors, the EZDrive circuit demonstrates a circuit design that eliminates the need for a discrete driver to reduce the number of components. It is also claimed to be easy to implement and adaptable to many power levels, switching frequencies, and LLC/PFC controllers.

Using GaN transistors result in AC adapters that are five times smaller and wireless charging solutions that have 50 times more wireless transfer transmit power than is possible with silicon, explains the company.

The company is displaying these transistors at the Applied Power Electronics Conference (APEC) in Anaheim, California (17 to 21 March)