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Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
650V aGaN transistor family serves high efficiency designs
![](http://79.170.40.53/power-mag.com/userfiles/image/PEE-April2019/11-04-alpha Omega.jpg)
The 70mΩ pure enhancement mode device is manufactured on a qualified GaN-on-Si substrate technology that has in excess of 50% smaller die area, 10x lower gate charge (Qg), and eliminates the body diode reverse recovery charge (Qrr) of traditional silicon MOSFET technology. Additionally, the company’s aGaN technology’s low on-state gate leakage allows engineers to drive the transistor with a selection of commercially available Si MOSFET gate drivers.
The 650V transistor is available in a low inductance thermally enhanced DFN8x8 package, which has a large thermal pad for heat removal and a separate driver sense pin for controllable switching speed.
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