The aGaN 650V transistor from Alpha and Omega Semiconductor is designed for high efficiency and high-density power supplies in the telecomms, server, and consumer adapter markets. These high-efficiency server power supplies reduce cooling requirements, maximise rack area, and minimise the associated energy cost, claims the company.

The 70mΩ pure enhancement mode device is manufactured on a qualified GaN-on-Si substrate technology that has in excess of 50% smaller die area, 10x lower gate charge (Qg), and eliminates the body diode reverse recovery charge (Qrr) of traditional silicon MOSFET technology. Additionally, the company’s aGaN technology’s low on-state gate leakage allows engineers to drive the transistor with a selection of commercially available Si MOSFET gate drivers.  

The 650V transistor is available in a low inductance thermally enhanced DFN8x8 package, which has a large thermal pad for heat removal and a separate driver sense pin for controllable switching speed.