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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
 
Reference design illustrates GaN innovation for consumer devices

The two companies have collaborated to produce the reference design for high efficiency, high power density adapter applications for HDTV power supplies, gaming notebooks and consoles, and power supplies for industrial and medical devices using GaN Systems’ 650V, 15A GaN E-HEMTs and ON Semiconductor’s NCP51820, NCP13992, NCP1616, and NCP4306 controller and driver ICs. 

This system reference design includes an application note with detailed technical information including schematic, PCB layout, and bill of materials files, EMI and efficiency data. The kit hardware has power factor correction (PFC), LLC, and secondary stages, and features a high-efficiency synchronous PFC which meets CoC T2 benchmark, a versatile, low-cost two-layer design and universal input with 19V output at 340W peak. According to GaN Systems, designers using this GaN-based reference design can reach power densities up to 32W per cubic inch.

“Fast-switching GaN works effectively with our advanced controller and drivers to optimise system designs for high power density, removing design barriers and enabling designers to take advantage of the numerous benefits provided by GaN E-HEMTs,” explained Ryan Zahn, director of marketing at ON Semiconductor. “With rising interest and adoption of GaN, we look forward to continued collaboration with GaN Systems to support and meet the new power requirements taking place across many industries.”

“This reference design developed in collaboration with ON Semiconductor makes it easier and more cost effective to design as GaN gains popularity as a building block in the adapter market,” said Charles Bailley, senior director, Worldwide Business Development at GaN Systems. “This release is the first of several systems and integrated packaging innovations in development, which will significantly expand the GaN ecosystem.”

 

 

 



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