Features
Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
More details...
AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
Power Electronics Europe News
SiC options can replace silicon diodes
Toshiba Electronics Europe has extended its family of 650V SiC Schottky barrier diodes with 6, 8 and 10A versions, joining the 12A original diode.
They can be used in power conditioners for photovoltaic power generation systems and as replacements for silicon diodes in switching power supplies, where they are 50% more efficient, claims the company. SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation.
View PDF
| Home / News / Features / Events / Media Data / Issue Archive / Magazine Subscription / Contact Us
| Privacy Policy | Site Map | © Copyright DFA Media
| Web design by Immersive Media
| Privacy Policy | Site Map | © Copyright DFA Media
| Web design by Immersive Media