Designed for high efficiency applications in industrial and automotive environments, the next-generation αSiC technology will enable customers to achieve higher levels of efficiency and power density compared to existing silicon, says the company.

The MOSFET minimises both AC and DC power losses through a low gate resistance (RG) design. This is combined with the low increase in on-resistance (RDS_ON) over temperature to achieve high efficiencies across switching frequencies and temperatures. Increased efficiency can result in significantly reduced system costs and total bill of materials (BoM) costs for end uses such as solar inverters, UPS systems, and EV inverter and charging systems.

The first product release for this platform, the AOK065V120X2, is a 1200V 65mΩ SiC MOSFET available in a TO-247-3L package.  It is designed to be driven with a -5V/ 15V gate drive, for compatibility with existing high voltage IGBT and SiC gate drivers. It can be used with a unipolar drive.  Other benefits for the αSiC platform is a robust unclamped inductive switch (UIS) capability, enhanced short circuit performance, and a high maximum operating temperature of 175°C, says the company.

The αSiC MOSFET portfolio joins the company’s 650V GaN platform also for the wide bandgap power semiconductor market. The company has confirmed that additional devices, with a broader range of on-resistance and additional package options with full AEC-Q101 qualification will be added later.

The AOK065V120X2 is available now in production quantities.