The silicon carbide (SiC) MOSFETs target auxiliary power supplies in three-phase conversion systems such as motor drives, renewables, charging infrastructure and HVDC systems, which usually operate below 100W.

The MOSFETs’ single-ended flyback topology is now enabled for DC-link connected auxiliary circuits up to 1000V DC input voltage. This means high efficiency and high reliability auxiliary converters using a single-ended flyback converter can now be implemented in three-phase power conversion systems, says the company, contributing to reducing both footprint size and the bill of materials cost.

The MOSFETs are said to combine the SiC properties of low losses with a small footprint, in a high voltage SMD package to reduce the complexity in auxiliary power supplies.

The 1700V blocking voltage eliminates design concerns regarding over-voltage margin and reliability of power supplies. CoolSiC trench technology is claimed to have the lowest device capacitances and gate charges for transistors of this voltage class to reduce power loss by more than 50% and 2.5% higher efficiency compared to 1500V silicon MOSFETs. The efficiency is 0.6% higher, compared to other 1700V SiC MOSFETs, says the company. The low losses enable compact SMD assembly with natural convection cooling without the need for a heatsink.

The new 1700 V CoolSiC trench MOSFETs are optimised for flyback topologies with 12V / 0V gate source voltage compatible with common PWM controllers. They do not need a gate driver IC and can be operated directly by the flyback controller. On-resistance ratings are 450, 650 or 1000mΩ.

The seven-lead D²PAK SMD package offers extended creepage and clearance distances over 7.0mm.  

CoolSiC MOSFETs 1700 V in D²PAK-7L package are available and in series production.