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AC/DC power factor correction module offers up to 1,512W
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Latest CoolSiC package opens up opportunities for SiC

Designed in half-bridge topology, it is based on the trench chip technology. According Infineon Technologies, it opens up silicon carbide for applications in the medium power range starting at 250kW. This is the point where silicon reaches the limits of power density with IGBT technology, says the company. Suitable applications for the 62mm module in place of a 62mm IGBT module include solar, server, energy storage, EV charger, traction, commercial induction cooking and power conversion systems.

The 62mm module features CoolSiC MOSFETs, which enable a high current density. The low switching and conducting losses minimise cooling and smaller magnetic components can be used due to the high switching frequency, points out the company. Implementing CoolSiC chip technology, is claimed to make it possible to design smaller inverter designs for the application in terms of size and reduce the overall system costs.

The robust housing has a base plate and screw connections. It is optimised for high system availability, minimum service cost and downtime losses. The high thermal cycling capability contributes to reliability, together with a continuous operating temperature of 150°C. The symmetrical internal design of the housing allows identical switching conditions for the upper and lower switch. The thermal performance of the module can be optionally improved with pre-applied thermal interface material (TIM).

The CoolSiC MOSFETs 1200V in the 62mm package is available in 6mΩ/250A, 3mΩ/357A and 2mΩ/500A models. An evaluation is available for fast characterisation (double pulse/continuous operation). It offers a flexible adjustment of the gate voltage and gate resistors and can serve as a reference design for driver boards for series production.

Infineon is taking part in PCIM 2020 (7-8 July). Registration to attend the virtual exhibiton and conference is open from today.

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