Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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The 500 to 6000MHz amplifier is designed for RF product testing, broadband mobile jamming and band-specific high-power applications in the UHF, L, S and C frequency bands.
It is guaranteed to deliver 25W minimum output power (40W typical) and related RF performance under all specified temperature and environmental conditions.
The small signal gain is 62dB, with small signal gain flatness of ±5dB (max). I/O impedance is 50Ω.
The compact module measures 7.0 x 4.0 x 1.1 inches (178 x 100 x 28mm). It uses high power RF GaN transistors and has an RS-485 serial interface for monitoring and control. There are also protection functions to ensure high availability, says the company.
Richardson RFPD is taking part in PCIM Europe 2020. The virtual event takes on 7 - 8 July 2020. Registration to attend is open now.
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