Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Integrations released the InnoSwitch™3-AQ, an AEC-Q100-qualified flyback switcher with integrated 750 V Silicon MOSFET and secondary-side sensing. The newly qualified device family targets automotive EV applications, such as traction inverter, OBC (on-board charger), EMS (energy management DC/DC bus converters) and BMS (battery management systems).
The new InnoSwitch uses the high-speed FluxLink™ coupling to achieve ±3 % accuracy for combined line and load regulation while eliminating both dedicated isolated transformer sense-windings and optocouplers. FluxLink maintains output voltage regulation even under the transient stress test. The integrated 750 V MOSFET meets stringent automotive de-rating requirements, and an on-chip synchronous rectifier controller delivers above 90 % efficiency at the nominal 400 VDC input voltage. Optimized designs achieve less than 10 mW no-load energy usage across the input voltage range. The InnoSwitch3-AQ family ICs are packaged in a surface-mount InSOP with 11 mm primary to secondary creepage, which exceeds the stringent requirements for high altitude (>5000 m) isolation. InnoSwitch3-AQ ICs are available in the InSOP-24D package. Devices are available now with prices starting at $2.75 in 10,000-piece quantities.
The DER-840Q reference design incorporating the newly released IC demonstrates start-up, shutdown and efficient operation from 30 VDC to 550 VDC input, as well as fast transient response and a variety of safety and protection features. AS
https://ac-dc.power.com/products/innoswitch3-aq
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