Features
Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
GaN Systems releases reference design for GaN chargers
GaN is popular in consumer electronics for smaller, lighter, more energy-efficient and faster charging, explains the company. The reference design is supplied with an operating charger and design documentation, for ease of implementation. It is claimed to reduce time to market, with fewer redesigns, PCB respins and testing.
GaN technology also offers extremely high switching speed, low on-resistance, and zero reverse recovery.
This GaN-based reference design is claimed to exceed many designs, and offer a better alternative to multi-chip, monolithic solution, and other discrete solutions.
The reference design has 90 to 265V, 50/60Hz input with output via USB-C of 5.0V, 3.0A, 9.0V, 3.0A, 12V, 3.0A, 15V 3.0A, 20V, 3.25A and 65W max. Power density (with case) is 18.5W per inch3.
There is also over-voltage, over-current, short circuit and open loop protection. The reference design is certified to CISPR22 Conduction and Radiation Class B for EMI.
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