The 

The company says the devices can also be used for solar maximum power point tracker (MPPTs), DC/DC converters (hard-switched and resonant), and multi-level high voltage converters.

The 8mΩ EPC2215 is rated 162A pulsed and the 22mΩ EPC2207 is rated at 54A pulsed. Both are approximately half the size of EPC’s previous 200V eGaN devices and deliver double the performance; the advantage is even greater when compared with a benchmark silicon device, says the company. The EPC2215 has 33% lower on resistance, and is 15 times smaller in size.  Gate charge (QG) is 10 times smaller than the silicon MOSFET benchmark and, as is the case with all eGaN FETs, there is no reverse recovery charge (QRR) to enable lower distortion class D audio amplifiers and more efficient synchronous rectifiers and motor drives, says EPC.

“This latest generation of eGaN FETs achieve higher performance in a smaller, more thermally efficient size, and at a comparable cost to traditional MOSFETs,” confirms Alex Lidow, co-founder and CEO of EPC.

EPC collaborated with Semiconductor Power Electronics Center (SPEC) at University of Texas at Austin to develop a 400V, 2.5kW-capable eGaN FET-based four-level flying capacitor multi-level, bridgeless, totem-pole rectifier that is suitable for data centre applications using the new EPC2215.  Professor Alex Huang, commented: “The advantageous characteristics of eGaN FETs allowed this converter to achieve high power density, ultra-high efficiency, and low harmonic distortion.”

The EPC2215 (and half bridge development board, the EPC9099) and the EPC2207 (and EPC90124 half bridge development board) are available now from the distributor, Digi-Key.