The MOSFETs support accelerated switching speeds (with rise times of as little as 10ns). Exhibiting on-resistance figures down to 20mΩ and gate charge values which are claimed to be industry-leading, the MOSFETs are subject to minimal power losses. The robust devices can cope with ultra-high current surge pulses, and feature a dielectric breakdown field strength that is an order of magnitude greater than that for equivalent silicon MOSFETs, says the company. The wide operating temperature range covers -55°C to 175°C.

The 1200V SiC MOSFETs are supplied in compact TO247 packages and surface mount D2PAK. They are also lead-free (Pb-free) and conform to RoHS environmental directives. They are also fully UIL tested.

The MOSFETs are suitable for a wide variety of applications, including uninterruptible power supplies (UPS), electric vehicle charging stations, DC/DC converters, motor control systems, and solar inverters. AEC-qualified variants are available.

The N-channel SiC MOSFETs are shipping now from RS in the EMEA and Asia Pacific regions.