Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Designed for the robotics and automation industry, the MOSFETs enable high efficiency in various power ratings for servo drive solutions, for maintenance-free motor drive inverters, says the company.
Additional applications for the surface mount devices include compact charging infrastructure and industrial power supplies.
The 1200V MOSFET is in a D 2PAK-7 SMD package, which enables passive cooling. With up to 80 per cent loss reduction compared to a silicon-based solution, it eliminates the need for cooling fans and related services. Eliminating cooling fans in automation applications saves both maintenance and material, said Peter Wawer, division president of Industrial Power and Control at Infineon. “By combining CoolSiC trench MOSFET chip with .XT interconnection technology we enhance the thermal and cycling capabilities in a small package form factor,” he explained. This allows the drive to be integrated in constrained spaces, such as within the motor or into the arm of a robot.
SiC MOSFETs are particularly well suited to automation, as the Ohmic conduction losses and controllable switching transients match the load profile of servo motors. An 80 per cent system loss reduction is possible, even for the same EMC level as for IGBT solutions, at dv/dt:s of 5.0 to 8.0V/ns.
This CoolSiC MOSFET has a short-circuit withstand time of 3 microseconds, which meets servo motor requirements where relatively small inductors and short cables are in use.
The surface mount devices are rated from 30 to 350mΩ. The .XT technology allows up to 30 per cent extra loss to be dissipated through the chip-package interconnection, compared to standard packages. The series is claimed to show best-in-class thermal performance and cycling capabilities, resulting in up to 14 per cent higher output current, or double the switching frequency, or 10 to 15K lower operating temperatures compared to standard technology.
The 1200V CoolSiC MOSFETs in D 2PAK-7 package are available for order now. Infineon plans to introduce the SMD package portfolio with a 650V series, with over 18 products ranging from 25 to 200mΩ RDS (on). Engineering samples will be available next year.
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