Power_electronics Features

Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
More details...
AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
Power Electronics Europe News
Infineon to Acquire International Rectifier

Infineon Technologies to Acquire International Rectifier

Infineon (www.infineon.com) and International Rectifier (www.irf.com) announced on August 20 evening that they have signed a definitive agreement under which Infineon will acquire International Rectifier for US-Dollar 40 per share in an all-cash transaction valued at approximately US-Dollar 3 billion. The acquisition combines two semiconductor companies with leadership positions in power management technology. According to market researcher IHS/IMS Infineon ranks no. 1 with 11.8 % share of the $ 15 billion power semiconductor market while IR ranks with 5.4 % at no. 6. By the integration of International Rectifier, Infineon complements its offerings and will be able to provide customers with an even broader range of innovative products and services also in the automotive market. Infineon will also benefit significantly from greater economies of scale as well as a larger regional footprint particularly in the USA and Asia.

“The acquisition of International Rectifier is a unique opportunity. With their great knowledge of specific customer needs and their application understanding, International Rectifier employees will contribute to Infineon’s strategic development from product thinking to system understanding and system solutions. The combination of Infineon’s and International Rectifier’s products, technological and innovative excellence, as well as distributional strength will unleash great potential. We see IR's activities as a complement to our product portfolio in Silicon Carbide with their efforts in Gallium Nitride – a promising technology for high-efficiency power electronic systems and power supplies. Additionally we will gain some new market share in hi rel applications such as aerospace. We also see some market opportunities to transfer some more power semiconductors to our 300-mm wafer fabs”.

The International Rectifier Board of Directors and Infineon’s Supervisory Board have approved the transaction. The closing of the transaction is subject to regulatory approvals in various jurisdictions and customary closing conditions, as well as approval of International Rectifier stockholders. The transaction is expected to close late in the calendar year 2014 or early in the calendar year 2015 subject to regulatory approval. “This transaction provides significant value to our stockholders and opens new strategic opportunities for both our customers and employees. By combining two complementary providers in power management solutions, International Rectifier will benefit from Infineon’s products and technologies, manufacturing and operational excellence and greater R&D scale, comments Oleg Khaykin, President and CEO of International Rectifier.

A first comment from industry: "We are gratified to see that Infineon recognizes the excellent technology developed by International Rectifier.  Especially significant is International Rectifier's GaN technology.  GaN-on-Silicon transistors are in the process of replacing Silicon-based power MOSFETs and IGBTs, and Infineon, through this acquisition, is showing their recognition of this major technology shift", said Alex Lidow, CEO of Efficient Power Conversion Corporation and former CEO of International Rectifier.

According to September 8 data, Infineon Technologies AG consolidated its position as global market leader in power semiconductors last year. With a market share of 12.3 per cent, the company came in first for the eleventh time in a row, according to a study carried out by IHS Inc. Infineon also took the lead for the first time in the market for MOSFET power transistors. The global market for power semiconductors dropped by 0.3 percent to around 15.4 billion US dollars in 2013. Despite this weaker environment, Infineon increased its turnover, thereby boosting its market share by 0.9 percentage compared to the year 2012 up to 12.3 per cent. In the MOSFET power transistor segment, the company enlarged its market share by 1.6 percentage points to 13.6 percent, thereby becoming the largest provider in this segment for the first time. Infineon also gained market shares in the submarkets for discrete IGBT power transistors (first place with 24.7 percent) and IGBT modules (second place with 20.5 percent). “Infineon’s strategy proved right: By taking the step from product-oriented thinking towards a systems-level perspective, we are offering our customers just the right products to become even more successful. Our continuous gains in the field of MOSFET power transistors are impressive evidence of this. Even in a weaker market phase, we have managed to continue on our growth path,” says Dr. Reinhard Ploss, CEO of Infineon Technologies AG.




Go Back   
Newsletter sign up