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NewSpace demands low voltage, high current power for performance and longevity - Nov 2022
Matt Renola, Senior Director, Global Business Development – Aerospace & Defense
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Power Electronics Europe News
Low spike 40V, N-channel power MOSFET reduces EMI

The MOSFET’s cell structure uses a parasitic snubber, which limits noise and ringing during switching. This results in a lower peak voltage when switching, and reduced signal ringing. Applications such as high efficiency DC/DC converters, motor drivers and switching voltage regulators will benefit from the MOSFET’s low spike capability.
The MOSFET is supplied in a 5.0 x 6.0mm SOP Advance package. It has a 0.71°C/W channel-to-case thermal resistance for efficiency where space is constrained.
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