Power_electronics Features

Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
650V aGaN transistor family serves high efficiency designs
The aGaN 650V transistor from Alpha and Omega Semiconductor is designed for high efficiency and high-density power supplies in the telecomms, server, and consumer adapter markets. These high-efficiency server power supplies reduce cooling requirements, maximise rack area, and minimise the associated energy cost, claims the company.


The 70mΩ pure enhancement mode device is manufactured on a qualified GaN-on-Si substrate technology that has in excess of 50% smaller die area, 10x lower gate charge (Qg), and eliminates the body diode reverse recovery charge (Qrr) of traditional silicon MOSFET technology. Additionally, the company’s aGaN technology’s low on-state gate leakage allows engineers to drive the transistor with a selection of commercially available Si MOSFET gate drivers.  


The 650V transistor is available in a low inductance thermally enhanced DFN8x8 package, which has a large thermal pad for heat removal and a separate driver sense pin for controllable switching speed.





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