The two rad-hard GaN transistors have low RDS(on) and a high current for increased power density for conversion in critical spaceborne and other high reliability environments. 

According to EPC Space, they deliver low on resistance and high current capability for high power density solutions that are lower in cost and more efficient than the nearest comparable rad-hard silicon MOSFET.

The EPC7020G is a 200V, 14.5mΩ, 200A pulsed rad-hard GaN transistor and the EPC7030G is a 300V, 32mΩ, 200A pulsed rad-hard GaN transistor.

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices, said EPC Space, and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

EPC Space already offers the 40V, 4.5mΩ EPC7019G and the 100V, 4.5mΩ EPC7018G to cover applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes.

The latest GaN transistors are packaged in the high current G-package hermetic packages and have very small footprints of less than 45mm². “The G-Package family offers the lowest on-resistance of any packaged rad-hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad-hard silicon solutions”.