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Power_electronics Features

Solving the Challenges of Increasing Power Density By Reducing Number of Power Rails - March 2023
By Andy Wang, Business Line Director, High-Voltage Power Business Unit Allegro MicroSystems
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Latest Features

eGaN FETs enable more than 4 kW/in3 power density for 48 V to 12 V power conversion - March 2023
GaN transistors in Chip Scale Package (CSP) enable higher than 4 kW/in3 power density for 48V to 12V power conversion using an LLC resonant converter with up to 1 kW capability.
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Wolfspeed grows to meet supply challenge and launches high performance Gen 3+ die - March 2023
Silicon Carbide (SiC), known for long as the ideal semiconductor technology for power devices, has with design and manufacturing innovation not only increased its share of the existing market but enabled new applications, such as electric vehicles (EVs), by offering higher power density, better high-speed switching performance, higher breakdown field, higher thermal conductivity, higher chip temperatures and lower leakage currents than are possible with Silicon (Si).
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Why gate drivers are key to successful electric vehicle designs - Nov/Dec 2022
By Allegro MicroSystems
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Finding the Right Technology to Solve Datacenter Power Challenges - Nov/Dec 2022
Although Silicon (Si) is the most familiar technology, its smaller bandgap limits operating temperature, its low breakdown electric field restricts its use to lower voltages, and its low thermal conductivity limits power density compared to wide bandgap (WBG) materials, like gallium nitride (GaN) and Silicon Carbide (SiC).
Digitization and the rapid deployment of cloud services have boosted the growth of datacenters worldwide. WBG helps to reduce their power consumption.
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