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Power Electronics Europe News
40V eGaN FET is small for space-constrained applications
The 40V, 1.6mΩ eGaN FET is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications, claims EPC.

It is designed for use in applications which require high power density performance including 48 to 54V input servers. Lower gate charges and zero reverse recovery losses enable high frequency operation of 1.0MHz. High efficiency and power density are realised with the small 10.6mm2 footprint, says the company.

The FET can support 48 to 12V DC/DC from 500W to 2.0kW and exceed 98% efficiency. Using eGaN devices in both the primary side and the secondary side achieves maximum power density of 4000W/in3 and above.

EPC’s co-founder and CEO, Alex Lidow says: “The EPC2069 is . . . designed for the secondary side of the LLC DC/DC converter from 40 to 60V to 12 V, which is becoming very common for the new 48 to 54V input servers required for high density computing applications such as artificial intelligence and gaming”. The 40V FET offers both smaller size and reduced parasitics compared with previous-generation 40V GaN FETs, he adds, and at a lower cost.

There is also an accompanying development board. The EPC90139 development board is a 40V maximum device voltage, 40A maximum output current, half bridge with onboard gate drives, featuring the EPC2069 eGaN FETs. The 2.0 x 2.0-inch (50.8 x 50.8mm) board is designed for optimal switching performance and contains all critical components to evaluate the EPC2069.

Both the EPC2069 and EPC90139 are available to order from Digi-Key.


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