It has synchronous rectification and FluxLink safety-isolated feedback. Switching losses for the proprietary 1250V PowiGaN technology are less than a third of that seen in equivalent silicon devices at the same voltage, says the company. Power conversion efficiency is therefore high, up to 93% to enable compact flyback power supplies that can deliver up to 85W without a heatsink.

The company says that this 1250V device, following the introduction of 900V versions of the GaN-based InnoSwitch earlier this year, extend the efficiency benefits of GaN to an even wider range of applications, including many currently served by SiC technology.

The ICs enable an operating peak voltage of 1000V, which allows for industry standard 80% de-rating from the 1250V absolute maximum and allowing significant headroom for industrial applications. It can also be used in power grid environments which require robustness to protect against grid instability, surge and other power perturbations.

Samples of the 1250V InnoSwitch3-EP ICs are available now with volume shipment lead time of 16 weeks. There is also a reference design, DER-1025, describing a 12V, 6A flyback converter, available for free download.

The ICs are available via Power Integrations sales representatives or one of the company’s authorised worldwide distributors: DigiKey, Newark, Mouser and RS Components.

The company said it was first to market with high volume shipments of GaN-based power supply ICs and is now advancing high voltage GaN technology and commercial deployment “rendering even the best high-voltage silicon MOSFETs obsolete along the way,” said Radu Barsan, vice president of technology at Power Integrations.