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Gate driver ICs are AEC-Q100 certified
The SID1132KQ and SID1182KQ can be used to drive 650, 750 and 1200V automotive IGBT and SiC-MOSFET modules, and are rated for peak currents of ±2.5 and 8.0A respectively. The SID1182KQ is claimed to have the highest output current of any isolated gate driver available, capable of driving a 600A /1200V and 820A /750V switch.


The single-channel IGBT and SiC-MOSFET driver ICs features the company’s FluxLink magneto-inductive bi-directional communication technology which ensures reinforced galvanic isolation between the primary and secondary sides. The coupling technology permits data transfer with galvanic isolation and includes a minimum internal 0.4mm separation between the low- and high-voltage sides. It therefore eliminates the need for opto-electronics, which suffer parametric changes with age and thermal degradation that limits operational lifetime. Magnetically-coupled conductors are locked into a homogenous thermoset, which together with the insulation enhances operational stability and longevity. The ICs use the company’s robust eSOP package, which offers a CTI level of 600, 9.5mm creepage and clearance distance, and easily meets automotive 5500m altitude requirements.


The IC can be used for EV and HEV applications including the main inverter, brake chopper, DC/DC battery converter and AC/DC onboard battery-charger designs. AEC-Q100 approval allows the gate driver family to be used in automotive design to increase system efficiency and provide safe, reliable isolation.


Using the ICs can reduce the bill of materials and simplifies the automotive DC/DC converter for the secondary-side supply voltage as only a unipolar voltage is required by the Scale-iDriver IC. Built-in voltage and power management circuitry is accompanied by safety features including advanced soft shut down (ASSD) for short-circuit turn-off and under-voltage protection.




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