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Rad-hard MOSFETs use proprietary technology to reduce size and weight
The IRHNJ9A7130 and IRHNJ9A3130  MOSFETs are based on the proprietary N-channel R9 technology platform. The Infineon Technologies company claims that, compared to previous technologies, they offer size, weight and power improvements, which are significant in systems such as high-throughput satellites, where the cost-per-bit-ratio can be significantly reduced.

The 100 V, 35 A MOSFETs are suited to mission-critical applications requiring an operating life up to and beyond 15 years. Target applications include space-grade DC/DC converters, intermediate bus converters, motor controllers and other high speed switching designs.

The IRHNJ9A7130 and IRHNJ9A3130 are fully characterized for TID (total ionizing dose) immunity to radiation of 100 and 300kRads respectively. An R DS(on) of 25mΩ (typical) is 33% lower than the previous device generation. In combination with increased drain current capability (35 versus 22A). According to the company, this allows the MOSFETs to provide increased power density and reduced power losses in switching applications.

The MOSFETs have improved single event effect (SEE) immunity and have been characterized for useful performance with linear energy transfer (LET) up to 90MeV/(mg/cm²); at least 10% higher than previous generations.

Both MOSFETs are packaged in a hermetically sealed, lightweight, surface mount ceramic package (SMD-0.5) measuring just 10.28 x 7.64 x 3.12mm. They are also available in bare die form.

Samples and production quantities are available now.



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