Power_electronics Features

Edge Computing Leverages Modular Power in Scalable Micro Data Centres - May 2022
Edge computing is essential to realizing the full potential of artificial intelligence (AI), machine learning and internet of things (IoT). These technologies are being infused into every corner of...
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Power Electronics Europe News
High-speed gate driver pairs with MOSFET RF module
The modules are packaged in IXYS RFs DE-series low-inductance surface mount RF package. The CMOS high-speed, high-current integrated gate driver and MOSFET modules are specifically designed for Class D, E, HF and RF applications at up to 27MHz, as well as applications requiring high-speed, high-power switching. Layout techniques minimise stray lead inductance. Small internal delays make the modules suitable for high power operation where combiners are used. Two devices are available, the IXZ631DF12N100 1,000V, 12A device and the 500V, 18A IXZ631DF18N50. Both produce voltage rise and fall times of less than 5ns, and minimum pulse widths of 8ns. In pulsed mode the 500V module provides up to 95A of peak current; the 1,000V module provides 72A. The isolated substrate provides over 2,500V isolation. The devices are RoHS-compliant and easy to mount, with no insulators needed.

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