The three-phase SiC MOSFET IPMs accelerate the design of SiC-based power converters enabling high efficiency and high power density, says the company. They integrate a three-phase SiC MOSFET module with a powerful gate driver. The embedded gate driver addresses fast switching SiC transistors effects, such as negative drive and Active Miller Clamping (AMC) to prevent parasitic turn-on, desaturation detection and soft-shut-down (SSD) for short-circuit events as well as undervoltage lockout (UVLO) functions on the gate driver and DC bus voltages to monitor operation of the system.

Another module, CMT-PLA3SB12340AA, is based on a lightweight AlSiC (aluminium silicon carbide) flat baseplate that meets the demand for natural convection or forced cooling in aerospace and in dedicated industrial applications. These new IPMs leverage a technology platform that can be rapidly adapted to new voltage, power and cooling requirements.

The liquid-cooled power modules are based on a pin fin baseplate and are rated for 1200V blocking voltages and for 340A to 550A maximum continuous currents. The on resistance ranges from 2.53 to 4.19mΩ depending on current rating. The total switching energies are as low as 7.48mJ (Eon) and 7.39mJ (Eoff) at 600V/300A.

According to Cissoid, the design of the power module and the gate driver is optimised for lowest switching energies by carefully tuning dV/dt and controlling voltage overshoots inherent to fast switching. The reverse bias safe operating area (RBSOA) authorises peak currents up to 600A with DC bus voltages up to 880V making the power modules safe for 800V battery applications.

The air cooled module is designed for applications aerospace electromechanical actuators and power converters, where liquid cooling is not a viable option. The module is rated for a blocking voltage of 1200V and a maximum continuous current of 340A. The on resistance is equal to 3.25mΩ. On and off switching is 8.42mJ and 7.05mJ respectively at 600V and 300A. The power module is cooled down through an AlSiC flat baseplate. The thermally robust module is rated for 175°C junction temperature and the gate driver for 125°C ambient temperature.