AIN ceramic enables an increase of the output power or reduces the junction temperatures, says the company, to contribute to a longer lifespan for the system.

The latest 1200V MOSFET power modules are designed for high-power density applications including solar systems, uninterruptible power supplies, auxiliary inverters, energy storage systems and electric vehicle (EV) chargers.

The devices come in half-bridge configuration with an RDSon of 11mΩ in an EasyDual 1B package and 6mΩ in an EasyDual 2B package.

The FF11MR12W1M1_B70 and FF6MR12W2M1_B70 modules have CoolSiC MOSFET technology, offering gate oxide reliability and improved thermal conductivity of the direct copper bonding (DCB) material, the thermal resistance to the heat sink (R thJH) can be lowered by up to 40%. According to the company, the AIN ceramic combined with the modules increase the output power or reduce the junction temperatures.  

The two modules are available now.