As a result, the EPC23102 eGaN IC offers higher performance and a smaller size for high power density applications including 48V DC/DC conversion in high density computing, 48V BLDC motor drives, and class D audio amplifiers, said the company.

The eGaN IC is capable of a maximum withstand voltage of 100V, delivering up to 35A load current, with switching speeds greater than 1MHz.

The IC is based on the company’s proprietary GaN IC technology include integrated input logic interface, level shifting, bootstrap charging and gate drive buffer circuits controlling 6.6mΩ R_DS(on) high side and low side FETs configured as a half-bridge power stage.  

The IC has a thermally enhanced QFN package measuring just 3.5 x 5.0mm.

When operated in a 48 to 12V buck converter, the IC delivers greater than 96% peak efficiency at 1MHz switching frequency and around 8.0 to 17A of continuous load current with a rated current of 35A.

According to Alex Lidow, CEO and co-founder of EPC, GaN technology offers performance improvements. “Integrated devices are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency,” he says. “Designers can use these devices to make lighter weight and more precise BLDC motor drives, higher efficiency 48 V input DC-DC converters, higher fidelity class-d audio systems, and other industrial and consumer applications.”

The company also offers the EPC90147 development board. This is a 100V maximum device voltage, 35A maximum output current, half bridge featuring the EPC23102 ePower Stage IC. The board measures 2.0 x 2.0 inches (50.8 x 50.8mm) is designed for optimal switching performance and contains all critical components for evaluation, says EPC.

The company’s website also hosts the GaN Power Bench cross-reference tool which designers can use to find a GaN device to replace silicon MOSFET based on operating conditions.