The 1200V trench Field Stop VII (FS7) IGBTs will be primarily used in energy infrastructure applications like solar inverters, uninterruptible power supplies (UPS), energy storage and EV charging power conversion.

The IGBTs are used to boost input to high voltage (boost stage) as well as the inverter to provide an AC output in high switching frequency energy infrastructure applications. The low switching losses of FS7 devices enable higher switching frequencies that reduce the size of magnetic components, increasing power density and reducing system cost. For high power energy infrastructure applications, the positive temperature co-efficient of FS7 devices enables easy parallel operation, says onsemi.

Efficiency is critical in high switching frequency energy infrastructure applications, explains Asif Jakwani, senior vice president and general manager of the advanced power division, at onsemi.

The FS7 devices include high-speed (S-series) and medium-speed (R-series) options. All include an optimised diode for low VF, tuned switching softness and can operate with junction temperatures up to 175°C.

The S-series devices, which include the FGY75T120SWD, offer the best switching performance among currently available 1200V IGBTs in the market, says onsemi. Tested with currents up to seven times the rated value, the rugged IGBTs also offer best-in-class latch-up immunity, claims the company.

The R-Series is optimised for medium speed switching applications, such as motor control and solid-state relay in which conduction losses are dominant occurs.  The FGY100T120RWD, for example, shows a VCESAT as low as 1.45V at 100A, an improvement of 0.4V over previous generation devices.

The FS7 devices are available in a range of package styles including TO247-3L, TO247-4L, Power TO247-3L and as bare die.

Visit onsemi at PCIM Europe 2023: Hall 9-330