Features
Power_electronics Features

Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
More details...
AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
Power Electronics Europe News
 
IC includes HEMT, driver, current sense and protection; eliminates LDO in USB-PD
  

the company has recently announced a family of four new integrated  devices that combine power GaN HEMT, driver, current sense and other functions within a single, industry-standard QFN 6x8mm package. The 700V ISG610x SolidGaN devices cover the range from 140mΩ to 450mΩ, and potentially save PCB space and BOM count, while increasing efficiency and simplifying design for applications including USB-PD chargers, LED lighting, and AC/DC power supplies and PFC, QR flyback, ACF, and LLC converters. 

The new, integrated devices feature a wide 9V-80V VCC range which is reportedly beneficial in USB-PD applications that require up to 28V output. Competitive devices which have a limited 30V input voltage require an external high voltage LDO or several discrete components to achieve higher than 15V output. Their  new SolidGaN parts claim to easily cover the USB-PD output voltage requirements without external LDO or other parts, saving BOM cost and board area.
 

For low power operation, ISG610x family ICs also feature a low, 115µA quiescent current, thanks to an innovative automatic standby mode which is activated when the PWM signal voltage remains low for a certain time period. During this time, most of the internal circuitry is turned off, dramatically reducing energy wastage, enabling devices to meet the No-Load standby power specifications of regulatory bodies such as ENERGYSTAR.

The loss-less current sensing with 7% accuracy of the new SolidGaN devices offers several potential benefits. Firstly, because the current sensing resistor loss is eliminated, a larger RDS(on) can be accommodated with no  potential oss in performance, leading to cost reduction. Secondly, component count may be reduced and PCB footprint minimized

for more information visit: www.innoscience.com

 



View PDF
 
Go Back   
Newsletter sign up

Sponsors