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Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News

GaN device adopted in 45W Output USB-C Charger

The company hasannounced the adoption of its 650V GaN device (EcoGaN™) in the C4 Duo, a 45W output USB-C charger from Innergie, a brand of Delta , a global provider of IoT-based Smart Green Solutions headquartered in Taiwan. ROHM’s EcoGaN™ device claims to contribute to greater application performance, reliability, and miniaturization by providing higher efficiency in power supply systems.

Efforts to save energy are accelerating toward achieving a sustainable society by reducing power loss, especially in equipment that handle high power. Furthermore, GaN devices that enable high-speed switching are being considered for power supplies, since high frequency operation not only saves energy but also allows the use of smaller circuits.

Offering GaN-based devices under the brand name EcoGaN™, ROHM is claiming to be advancing product development and providing solutions by focusing on mastering the use of GaN, which has high potential but is difficult to handle. For discrete products, mass production of 150V withstand GaN HEMTs began in 2022 and 650V withstand GaN HEMTs in 2023 featuring industry-leading device performance (R_DS(ON) × C_iss / R_DS(ON) × C_oss). On top, integrating an ESD protection element into theGNP1150TCA-Z improves ESD breakdown tolerance by approximately 75% over standard GaN HEMTs, and has been evaluated to improve application reliability that ultimately led its adoption.

For more information contact: www.rohm.com

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