The company says the components set new standards in terms of both technology and price and are leaders in high-voltage super junction MOSFET technology. They feature an integrated, fast body diode, advanced connection technology and extremely robust commutation and are partly installed in housings with surface cooling. They are also easy to operate and integrate into existing designs. They are predestined for a wide range of power applications in the fields of telecommunications, EV charging technology or renewable energies. The MOSFETs are available in reel or tube packaging at www.rutronik24.com.

Rutronik says the components impress with their particularly low switch-on resistance (R_DS(ON)) and can therefore achieve an increase in efficiency of 0.1% compared to the C7 version and even 0.17% compared to P7. The optimised R_DS(on) also enables a higher power density, making it possible to minimise products in a silicon-based super junction (SJ) technology to a single-digit value of 7 mΩ.As MOSFETs, they represent an innovation at system level with a thermal resistance (R_th) that is between 14 % and 42 % lower, a low ringing tendency and simplified operation and integration.

 As MOSFETs, they represent an innovation at system level with a thermal resistance (R_th) that is between 14 % and 42 % lower, a low ringing tendency and simplified operation and integration.

Benefits at a glance:

• World class R_DS(on) * A
• Integrated fast body diode
• Excellent commutation robustness
• Advanced connection technology
• Housing with top side cooling
• Low ringing tendency
• 14 - 42% lower R_th
• Simplified portfolio
• Innovation at system level

Application examples:

• Automotive

EV charging, solar and energy storage systems

• End consumer appliances:

Air conditioning systems for residential buildings

Refrigerator compressors

Chargers, adapters Networks and telecommunications:

Servers

• Industry

UPS systems

 Industrial SMPS

Relays, circuit breakers

• Lighting systems